sot23 pnp silicon planar high voltage transistor issue 2 ? september 95 j complimentary type ? bss64 partmarking detail ? bss63 - t3 bss63r - t6 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -110 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -6 v continuous collector current i c -100 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br) -110 v i c =-10 m a collector-emitter breakdown voltage v (br)ceo -100 v i c =-100 m a* emitter-base breakdown voltage v (br)ebo -6 v i e =-10 m a collector cut-off current i ebo -100 -50 na m a v cb =-90v, v cb =-90v,t amb =150 o c emitter cut-off current i ebo -200 na v eb =-6v collector-emitter saturation voltage v ce(sat) -250 mv i c =-25ma, i b =-2.5ma base-emitter saturation voltage v be(sat) -900 mv i c =-25ma, i b =-2.5ma static forward current h fe 30 30 i c =-10ma, v ce =-1v i c =25ma, v ce =1v transition frequency f t 50 typ 85 mhz v ce =-5v, i c =25ma f=35 mhz output capacitance c obo typ. 3pf v cb =-10v, f=1mhz * measured under pulsed conditions. pulse width=300 m s. duty cycle 2% bss63 c b e page number
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